| PART |
Description |
Maker |
| WPS512K8VB-15RJI WPS512K8VB-15RJM WPS512K8VB-17RJI |
3.3V 512K x 8 SRAM, 15ns
3.3V 512K x 8 SRAM, 17ns
3.3V 512K x 8 SRAM, 20ns
|
White Electronic Designs
|
| 5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM. 15ns access time. Lead finish hot gold.
512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped.
512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow.
512K x 18 SRAM. 15ns access time. Lead finish factory option.
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| GS74108J-15 GS74108TP-8I GS74108J-8I GS74108TP-15 |
512K x 8 4Mb Asynchronous SRAM 12k × 8 4Mb的异步SRAM
512K X 8 STANDARD SRAM, 8 ns, PDSO36 0.400 INCH, SOJ-36
512K X 8 STANDARD SRAM, 8 ns, PDSO44 0.400 INCH, TSOP2-44
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| CY14B108M-ZSP20XC CY14B108K CY14B108K-ZS20XC CY14B |
1M X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock; Organization: 1Mb x 8; Vcc (V): 2.7 to 3.6 V; Density: 8 Mb; Package: TSOP
512K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
512K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
512K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
|
CYPRESS SEMICONDUCTOR CORP
Cypress Semiconductor, Corp.
|
| EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA |
20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
512Kx8 Monolithic SRAM SMD 5962-95600
512Kx8 Monolithic SRAM, SMD 5962-95600
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器
55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
|
White Electronic Designs
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| CY7C1382CV25 CY7C1382CV25-167AC CY7C1382CV25-167AI |
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
|
Cypress Semiconductor, Corp.
|
| AS7C33512NTF18A AS7C33512NTF18A.V.1.1 AS7C33512NTF |
3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 10 ns, PQFP100
3.3V 512K x 18 Flowthrough Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| AS7C25512NTD32_36A AS7C25512NTD32A AS7C25512NTD32A |
NTD? Sync SRAM - 2.5V
2.5V 512K x 32/36 Pipelined SRAM with NTD 512K X 32 ZBT SRAM, 3.5 ns, PQFP100
|
Alliance Semiconductor Corp...
ALSC
Alliance Semiconductor Corporation
Alliance Semiconductor, Corp.
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